Erratum: Energetic, vibrational, and electronic properties of silicon using a nonorthogonal tight-binding model [Phys. Rev. B 62, 4477 (2000)]

1.

High Thermal Conductivity of a Hydrogenated Amorphous Silicon Film
Xiao Liu, J. L. Feldman, D. G. Cahill, R. S. Crandall, N. Bernstein, D. M. Photiadis, M. J. Mehl, and D. A. Papaconstantopoulos
Phys. Rev. Lett. 102, 035901 (2009)

2.

Origin of the hole gas at the Si(111):Cl surface: Role of surface electronic structure, impurities, and defects
Torbjörn Blomquist and George Kirczenow
Phys. Rev. B 73, 195303 (2006)

3.

Structural model of amorphous silicon annealed with tight binding
N. Bernstein, J. L. Feldman, and M. Fornari
Phys. Rev. B 74, 205202 (2006)

4.

Poisson-Schrödinger and ab initio modeling of doped Si nanocrystals: Reversal of the charge transfer between host and dopant atoms
Torbjörn Blomquist and George Kirczenow
Phys. Rev. B 71, 045301 (2005)

5.

Tight-binding study of structure and vibrations of amorphous silicon
J. L. Feldman, N. Bernstein, D. A. Papaconstantopoulos, and M. J. Mehl
Phys. Rev. B 70, 165201 (2004)

6.

Consequences of zero-point motion to the radial distribution function of amorphous silicon
Joseph L Feldman, Noam Bernstein, Dimitris A Papaconstantopoulos, Michael J Mehl
Journal of Physics Condensed Matter 16, S5165 (2004)