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Phys. Rev. B 84, 113406 (2011) [4 pages]

Multiphonon Raman scattering in graphene

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Rahul Rao1,*, Derek Tishler2, Jyoti Katoch2, and Masa Ishigami2
1Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 43433, USA
2Department of Physics and Nanoscience Technology Center, University of Central Florida, Orlando, FL 32816, USA

Received 17 June 2011; revised 16 August 2011; published 12 September 2011

We report on multiphonon Raman scattering in graphene samples. Higher-order combination modes involving three and four phonons are observed in single-layer, bilayer, and few-layer graphene samples prepared by mechanical exfoliation. The intensity of the higher-order phonon modes (relative to the G peak) is highest in single-layer graphene and decreases with increasing layers. In addition, all higher-order modes are observed to upshift in frequency almost linearly with increasing graphene layers, betraying the underlying interlayer van der Waals interactions.

©2011 American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.84.113406
DOI:
10.1103/PhysRevB.84.113406
PACS:
81.05.ue, 73.22.Pr, 63.22.Rc, 33.20.Fb

*rrao@honda-ri.com, present address: Honda Research Institute, 1381 Kinnear Rd., Columbus, OH.