Phys. Rev. B 82, 125203 (2010) [4 pages]Nitrogen composition dependence of electron effective mass in GaAs1−xNxSee Also: Publisher's Note Received 3 February 2010; revised 14 July 2010; published 3 September 2010; corrected 20 October 2010 We have investigated the N composition, x, and temperature, T, dependence of the electron effective mass, m∗, of GaAs1−xNx films with sufficiently low carrier concentration that carriers are expected to be confined to near the bottom of the conduction-band edge (CBE). Using Seebeck and Hall measurements, in conjunction with assumptions of parabolic bands and Fermi-Dirac statistics, we find a nonmonotonic dependence of m∗ on x and an increasing T dependence of m∗ with x. These trends are not predicted by the two-state band anticrossing model but instead are consistent with the predictions of the linear combination of resonant nitrogen states model, which takes into account several N-related states and their interaction with the GaAs CBE. © 2010 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.82.125203
DOI:
10.1103/PhysRevB.82.125203
PACS:
72.20.Pa, 72.20.My, 71.18.+y, 81.05.Ea
See AlsoPublisher's Note: T. Dannecker, Y. Jin, H. Cheng, C. F. Gorman, J. Buckeridge, C. Uher, S. Fahy, C. Kurdak, and R. S. Goldman, Publisher's Note: Nitrogen composition dependence of electron effective mass in GaAs1−xNx [Phys. Rev. B 82, 125203 (2010)], Phys. Rev. B 82, 159903 (2010). |
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