Phys. Rev. B 81, 035304 (2010) [5 pages]Cs-induced charge transfer on (2×4)-GaAs(001) studied by photoemissionReceived 27 July 2009; revised 8 October 2009; published 6 January 2010 Cesium adsorption on (2×4)-GaAs(001) was studied by photoemission and low-energy electron diffraction. The different Cs-induced changes of As 3d and Ga 3d core-level spectra show that charge transfer is almost complete for Ga surface sites, but is negligible to surface As at a coverage ΘCs<0.3 ML. The situation becomes opposite for ΘCs>0.3 ML, at which transfer occurs to As but no longer to Ga. Charge transfer to As atoms leads to surface disordering and destabilization and induces surface conversion from As-rich to Ga-rich (4×2)-GaAs(001) surface after annealing at a reduced temperature of 450 °C. © 2010 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.81.035304
DOI:
10.1103/PhysRevB.81.035304
PACS:
68.43.-h, 79.60.-i, 73.61.Ey, 67.30.hp
|
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.