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Phys. Rev. B 81, 235318 (2010) [5 pages]

Electron tunnel rates in a donor-silicon single electron transistor hybrid

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Hans Huebl1,2,*, Christopher D. Nugroho1,3, Andrea Morello1, Christopher C. Escott1, Mark A. Eriksson4, Changyi Yang5, David N. Jamieson5, Robert G. Clark1, and Andrew S. Dzurak1
1Australian Research Council Centre of Excellence for Quantum Computer Technology, Schools of Electrical Engineering and Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia
2Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Str. 8, 85748 Garching, Germany
3Department of Physics, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801, USA
4Department of Physics, University of Wisconsin, Madison, Wisconsin 53706, USA
5Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Physics, The University of Melbourne, Melbourne, Victoria 3010, Australia

Received 14 March 2010; revised 8 May 2010; published 15 June 2010

We investigate a hybrid structure consisting of a small number of implanted 31P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby centers, turning from the off state to the conducting state when the charge configuration is changed. We present a method to measure fast electron tunnel rates between donors and the SiSET island, using a pulsed voltage scheme and low-bandwidth current detection. The experimental findings are quantitatively discussed using a rate equation model, enabling the extraction of the capture and emission rates.

© 2010 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.81.235318
DOI:
10.1103/PhysRevB.81.235318
PACS:
73.23.Hk, 73.20.Hb, 73.21.La

*Corresponding author; huebl@wmi.badw.de

 
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