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Phys. Rev. B 81, 224118 (2010) [12 pages]

Landau theory of domain wall magnetoelectricity

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Maren Daraktchiev1,2,*, Gustau Catalan1,3,†, and James F. Scott1,4,‡
1Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ, United Kingdom
2Department of Health, 330 Wellington House, 133-155 Waterloo Road, London SE1 8UG, United Kingdom
3ICREA and CIN2, CSIC-ICN, Campus Universitat Autonoma de Barcelona, Bellaterra 08193, Spain
4Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom

Received 21 February 2010; revised 13 May 2010; published 30 June 2010

We calculate the exact analytical solution to the domain wall properties in a generic multiferroic system with two order parameters that are coupled biquadratically. This is then adapted to the case of a magnetoelectric multiferroic material such as BiFeO3, with a view to examine critically whether the domain walls can account for the enhancement of magnetization reported for thin films of this material, in view of the correlation between increasing magnetization and increasing volume fraction of domain walls as films become thinner. The present analysis can be generalized to describe a class of magnetoelectric devices based on domain walls rather than bulk properties.

© 2010 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.81.224118
DOI:
10.1103/PhysRevB.81.224118
PACS:
77.80.Dj

*maren.daraktchiev@dh.gsi.gov.uk

gustau.catalan@cin2.es

jfs32@hermes.cam.ac.uk