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APS » Journals » Phys. Rev. B » Volume 81 » Issue 16
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Phys. Rev. B 81, 161304(R) (2010) [4 pages]

Probe and control of the reservoir density of states in single-electron devices

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M. Möttönen1,2,3, K. Y. Tan1, K. W. Chan1, F. A. Zwanenburg1, W. H. Lim1, C. C. Escott1, J.-M. Pirkkalainen1,2, A. Morello1, C. Yang4, J. A. van Donkelaar4, A. D. C. Alves4, D. N. Jamieson4, L. C. L. Hollenberg4, and A. S. Dzurak1
1Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering & Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
2Department of Applied Physics/COMP, School of Science and Technology, Aalto University, P.O. Box 15100, 00076 Aalto, Finland
3Low Temperature Laboratory, School of Science and Technology, Aalto University, P.O. Box 15100, 00076 Aalto, Finland
4Centre for Quantum Computer Technology, School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia

Received 6 October 2009; revised 15 December 2009; published 8 April 2010

We present a systematic study of the density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in reservoir DOS can be moved in the transport window independently of the other device properties. This method introduces a fast and convenient way of identifying excited states in these emerging nanostructures.

© 2010 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.81.161304
DOI:
10.1103/PhysRevB.81.161304
PACS:
73.21.-b, 61.72.uj
 
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