Phys. Rev. B 81, 121202(R) (2010) [4 pages]Gigahertz spin noise spectroscopy in n-doped bulk GaAs
See accompanying Physics Synopsis We advance spin noise spectroscopy to an ultrafast tool to resolve high-frequency spin dynamics in semiconductors. The optical nondemolition experiment reveals the genuine origin of the inhomogeneous spin dephasing in n-doped GaAs wafers at densities at the metal-to-insulator transition. The measurements prove in conjunction with depth-resolved spin noise measurements that the broadening of the spin dephasing rate does not result from thermal fluctuations or spin-phonon interaction, as suggested previously, but from spatial g-factor variations. © 2010 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.81.121202
DOI:
10.1103/PhysRevB.81.121202
PACS:
72.25.Rb, 72.70.+m, 78.47.-p, 85.75.-d
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