Phys. Rev. B 80, 049901(E) (2009) [1 pages]Erratum: Electronic structure models of phosphorus δ-doped silicon [Phys. Rev. B 79, 033204 (2009)]Received 11 June 2009; published 2 July 2009 © 2009 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.80.049901
DOI:
10.1103/PhysRevB.80.049901
PACS:
61.72.uf, 71.20.Mq, 71.20.Nr, 71.55.Cn, 99.10.Cd
See AlsoOriginal Article: Damien J. Carter, Oliver Warschkow, Nigel A. Marks, and David R. McKenzie, Electronic structure models of phosphorus δ-doped silicon, Phys. Rev. B 79, 033204 (2009). |
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