Phys. Rev. B 80, 045205 (2009) [11 pages]Simulation of piezoresistivity in n-type single-crystal silicon on the basis of the first-principles band structureReceived 11 March 2009; revised 26 May 2009; published 13 July 2009 We have simulated the piezoresistivity in n-type single-crystal bulk silicon based on the first-principles electronic band structure of model structures. Our simple procedure to calculate the piezoresistance coefficients is valid qualitatively and quantitatively for carrier electron transport in the multivalley conduction-band structure of n-type bulk silicon; the primitive longitudinal and transverse piezoresistance coefficients originate from the energy gap between the valleys, whereas the shear piezoresistance coefficient π44 arises from a distortion of the band energy surface in the valleys and can be presented clearly as a negative constant. The distinction between the origins of longitudinal, transverse, and shear piezoresistivity can be followed as a dependence on a carrier concentration or temperature. © 2009 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.80.045205
DOI:
10.1103/PhysRevB.80.045205
PACS:
72.20.Fr, 72.80.Cw, 71.20.Mq
|
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.