Phys. Rev. B 80, 205202 (2009) [6 pages]Temperature-dependent resistivity of ferromagnetic Ga1−xMnxAs: Interplay between impurity scattering and many-body effectsReceived 18 June 2009; revised 25 August 2009; published 6 November 2009 The static conductivity of the diluted magnetic semiconductor Ga1−xMnxAs is calculated using an equation of motion approach for the current response combined with time-dependent density-functional theory to account for Hartree and exchange interactions within the hole gas. We find that the Coulomb scattering off the charged impurities alone is not sufficient to explain the experimentally observed drop in resistivity below the ferromagnetic transition temperature: the often overlooked scattering off the fluctuations of localized spins is shown to play a significant role. © 2009 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.80.205202
DOI:
10.1103/PhysRevB.80.205202
PACS:
72.80.Ey, 75.50.Pp
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