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Phys. Rev. B 80, 155425 (2009) [7 pages]

Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy

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Nasim Alem1,2, Rolf Erni3,4, Christian Kisielowski3,4, Marta D. Rossell3,4, Will Gannett1,3, and A. Zettl1,2,3,*
1Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA
2Center of Integrated Nanomechanical Systems, University of California at Berkeley, Berkeley, California 94720, USA
3Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
4National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

Received 19 June 2009; published 12 October 2009

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We present a method to prepare monolayer and multilayer suspended sheets of hexagonal boron nitride (h-BN), using a combination of mechanical exfoliation and reactive ion etching. Ultrahigh-resolution transmission electron microscope imaging is employed to resolve the atoms, and intensity profiles for reconstructed phase images are used to identify the chemical nature (boron or nitrogen) of every atom throughout the sample. Reconstructed phase images are distinctly different for h-BN multilayers of even or odd number. Unusual triangular defects and zigzag and armchair edge reconstructions are uniquely identified and characterized.

© 2009 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.80.155425
DOI:
10.1103/PhysRevB.80.155425
PACS:
68.37.Og

*Author to whom correspondence should be addressed. azettl@berkeley.edu