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Phys. Rev. B 80, 155202 (2009) [6 pages]

Magnetoswitching of current oscillations in dilute magnetic semiconductor nanostructures

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R. Escobedo1, M. Carretero2,3, L. L. Bonilla2,3, and G. Platero4
1Departamento de Matemática Aplicada y Ciencias de la Computación, Universidad de Cantabria, 39005 Santander, Spain
2G. Millán Institute, Fluid Dynamics, Nanoscience and Industrial Mathematics, Universidad Carlos III de Madrid, 28911 Leganés, Spain
3Unidad Asociada al Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Cantoblanco, Madrid, Spain
4Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Cantoblanco, Madrid, Spain

Received 15 July 2009; revised 10 September 2009; published 13 October 2009

Strongly nonlinear transport through dilute magnetic semiconductor multiquantum wells occurs due to the interplay between confinement, Coulomb, and exchange interaction. Nonlinear effects include the appearance of spin-polarized stationary states and self-sustained current oscillations as possible stable states of the nanostructure, depending on its configuration and control parameters such as voltage bias and level splitting due to an external magnetic field. Oscillatory regions grow in size with well number and level splitting. A systematic analysis of the charge and spin response to voltage and magnetic field switching of II-VI dilute magnetic semiconductor multiquantum wells is carried out. The description of stationary and time-periodic spin-polarized states, the transitions between them and the responses to voltage or magnetic field switching have great importance due to the potential implementation of spintronic devices based on these nanostructures.

© 2009 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.80.155202
DOI:
10.1103/PhysRevB.80.155202
PACS:
75.50.Pp, 85.75.−d, 72.25.Dc, 73.63.Hs