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Phys. Rev. B 80, 121308(R) (2009) [4 pages]

Electric field tuning of spin-orbit coupling in KTaO3 field-effect transistors

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H. Nakamura and T. Kimura
Division of Materials Physics, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

Received 9 September 2009; published 28 September 2009

We report on the observation of weak antilocalization associated with large spin-orbit coupling in a tunable d electron system: a quasi-two-dimensional electron gas formed in a KTaO3 field-effect transistor. We find that spin-precession length of electrons can be tuned by gate voltage VG and is as short as tens of nanometers at large VG. Our results show that 5d transition-metal compounds having strong atomic spin-orbit couplings induced by heavy 5d elements could be utilized to electrically manipulate spins in nanoscale spintronic devices.

© 2009 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.80.121308
DOI:
10.1103/PhysRevB.80.121308
PACS:
85.75.−d, 73.20.Fz, 73.40.Qv