corner
corner
APS » Journals » Phys. Rev. B » Volume 79 » Issue 7
< Previous Article | Next Article >

Phys. Rev. B 79, 075415 (2009) [6 pages]

Modulation doping of a Mott quantum well by a proximate polar discontinuity

Download: PDF (706 kB) Buy this article Export: BibTeX or EndNote (RIS)

T. Higuchi1,*, Y. Hotta1, T. Susaki1, A. Fujimori2, and H. Y. Hwang1,3
1Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
2Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
3Japan Science and Technology Agency, Kawaguchi 332-0012, Japan

Received 28 April 2008; published 9 February 2009

See accompanying Physics Viewpoint

We present evidence for hole injection into LaAlO3/LaVO3/LaAlO3 quantum wells near a polar surface of LaAlO3 (001). As the surface is brought in proximity to the LaVO3 layer, an exponential drop in resistance and a decreasing positive Seebeck coefficient are observed below a characteristic coupling length of 10–15 unit cells. We attribute this behavior to a crossover from an atomic reconstruction of the AlO2-terminated LaAlO3 surface to an electronic reconstruction of the vanadium valence. These results suggest a general approach to tunable hole doping in oxide thin-film heterostructures.

© 2009 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.79.075415
DOI:
10.1103/PhysRevB.79.075415
PACS:
73.40.−c, 71.28.+d, 71.30.+h, 73.50.Lw

*higuchi@hwang.k.u-tokyo.ac.jp

 
< Previous Article | Next Article >