Phys. Rev. B 79, 075414 (2009) [7 pages]Ground-state properties of gapped graphene using the random phase approximationReceived 20 July 2008; revised 30 October 2008; published 6 February 2009 We study the effect of band gap on the ground-state properties of Dirac electrons in a doped graphene within the random phase approximation at zero temperature. Band gap dependence of the exchange, correlation, and ground-state energies and the compressibility are calculated. In addition, we show that the conductance in the gapped graphene is smaller than gapless one. We also calculate the band-gap dependence of charge compressibility and it decreases with increasing the band-gap values. © 2009 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.79.075414
DOI:
10.1103/PhysRevB.79.075414
PACS:
73.63.−b, 72.10.−d, 71.10.−w, 73.50.Fq
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