Applicability of the k⋅p method to modeling of InAs/GaSb short-period superlattices

We investigate the long-standing controversy surrounding modeling of the electronic spectra of InAs/GaSb short-period superlattices (SPSLs). Most commonly, such modeling for semiconductor heterostructures is based on the k⋅p method. However, this method has so far failed to predict the band structure for type-II InAs/GaSb SPSLs. Instead, it has systematically overestimated the energy gap between the electron and heavy-hole minibands, which led to the suggestion that the k⋅p method is inadequate for these heterostructures. Our results show that the physical origin of the discrepancy between modeling and experimental results may be the graded and asymmetric InAs/GaSb interface profile. We have performed band-structure modeling within the k⋅p method using a realistic interface profile based on experimental observations. Our calculations show good agreement with experimental data, both from our own measurements and from the published literature.