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Phys. Rev. B 79, 161402(R) (2009) [4 pages]

Fundamental asymmetry in interfacial electronic reconstruction between insulating oxides: An ab initio study

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Hanghui Chen1,3, Alexie M. Kolpak2,3, and Sohrab Ismail-Beigi1,2,3
1Department of Physics, Yale University, New Haven, Connecticut 06511, USA
2Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA
3Center for Research on Interface Structures and Phenomena (CRISP), Yale University, New Haven, Connecticut 06511, USA

Received 17 February 2009; published 3 April 2009

We present an ab initio study of the (001) interfaces between two insulating perovskites, the polar LaAlO3 and the nonpolar SrTiO3. We observe an insulating-to-metallic transition above a critical LaAlO3 thickness. We explain that the high conductivity observed at the TiO2/LaO interface and the lack of similar conductivity at the SrO/AlO2 interface are inherent in the atomic geometry of the system. A large interfacial hopping matrix element between cations causes the formation of a bound electron state at the TiO2/LaO interface. This mechanism for the formation of interfacial bound states suggests a robust means for tuning conductivities at various oxide heterointerfaces.

© 2009 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.79.161402
DOI:
10.1103/PhysRevB.79.161402
PACS:
73.40.−c, 73.20.−r