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Phys. Rev. B 79, 155210 (2009) [9 pages]

Raman scattering study of the long-wavelength longitudinal-optical-phonon–plasmon coupled modes in high-mobility InN layers

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Ramon Cuscó, Jordi Ibáñez, Esther Alarcón-Lladó, and Luis Artús
Institut Jaume Almera, Consell Superior d’Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain

Tomohiro Yamaguchi and Yasushi Nanishi
Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan

Received 20 January 2009; revised 17 March 2009; published 24 April 2009

We have studied the longitudinal-optical (LO)-phonon–plasmon coupled modes in high-mobility InN layers with free-electron densities ranging from 2.3×1018 to 1.6×1019 cm−3 by means of Raman scattering. The observed L coupled-mode peak displays the usual behavior for the low energy branch of the long-wavelength coupled modes, increasing in frequency and phononlike character as the electron density increases. The L mode behavior can be satisfactorily explained by the standard dielectric model developed by Hon and Faust which takes into account wave-vector conserving scattering processes governed by the dipole-allowed deformation potential and electro-optic mechanisms. The free-electron density obtained from line-shape fits to the L peak agrees well with Hall-effect measurements. The E2high mode shifts to lower frequencies as the electron density increases, suggesting that strain relaxation has a bearing on the residual electron density in the InN layers. The L frequency exhibits also a dependence on the excitation wave vector, which further indicates that wave-vector conserving scattering by LO-phonon–plasmon coupled modes takes place in these high-mobility samples. The presence of a relatively strong LO signal is attributed to surface-field-induced scattering in the accumulation region.

© 2009 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.79.155210
DOI:
10.1103/PhysRevB.79.155210
PACS:
78.30.Fs, 63.20.kk