Phys. Rev. B 78, 081401(R) (2008) [4 pages]Scattering potentials at Si-Ge and Sn-Ge impurity dimers on Ge(001) studied by scanning tunneling microscopy and ab initio calculations
Scattering potentials for π∗ electrons at Si-Ge and Sn-Ge dimers on a Ge(001) surface are studied by scanning tunneling microscopy and ab initio calculations. Phase-shift analysis of standing waves in dI/dV images reveals that Si and Sn atoms located in the conduction path of π∗ electrons form potentials with the sign opposite to each other. Density-functional calculations and simple calculations based on the nearly-free-electron model explain the observed potential structures. These results are qualitatively understood by relative p-orbital energy of the Si, Sn, and Ge atoms. © 2008 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.78.081401
DOI:
10.1103/PhysRevB.78.081401
PACS:
73.20.Hb, 68.37.Ef, 82.20.Wt
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