Phys. Rev. B 78, 075201 (2008) [7 pages]Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossingSee Also: Publisher's Note Received 5 May 2008; revised 9 July 2008; published 12 August 2008; corrected 20 October 2008 While the support for the existence of a Mn-derived impurity band in the diluted magnetic semiconductor Ga1−xMnxAs has recently increased, a detailed quantitative analysis of its formation and properties is still incomplete. Here, we show that such an impurity band arises as the result of an anticrossing interaction between the extended states of the GaAs valence band and the strongly localized Mn states according to the valence band anticrossing model. The anticrossing interpretation is substantiated by optical measurements that reveal a shift in the band gap of GaAs upon the addition of Mn and it also explains the remarkably low hole mobility in this alloy. Furthermore, the presence of a Mn-derived impurity band correctly accounts for the metal-to-insulator transition experimentally observed in Ga1−xMnxAs1−y(N,P)y with y≤0.02. © 2008 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.78.075201
DOI:
10.1103/PhysRevB.78.075201
PACS:
71.30.+h, 71.20.Nr, 73.61.Ey
See AlsoPublisher's Note: K. Alberi, K. M. Yu, P. R. Stone, O. D. Dubon, W. Walukiewicz, T. Wojtowicz, X. Liu, and J. K. Furdyna, Publisher's Note: Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing [Phys. Rev. B 78, 075201 (2008)], Phys. Rev. B 78, 159904 (2008). |
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