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Phys. Rev. B 78, 073403 (2008) [4 pages]

Effect of strain on the energetics and kinetics of dissociation of Sb4 on Ge(001)

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Jian-Tao Wang1,*, Changfeng Chen2, E. G. Wang1, Ding-Sheng Wang1, H. Mizuseki3, and Y. Kawazoe3
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
2Department of Physics, University of Nevada, Las Vegas, Nevada 89154, USA
3Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

Received 13 June 2008; revised 10 July 2008; published 11 August 2008

A comprehensive search for the precursor dissociation of antimony tetramers on Ge(001) with strain was carried out using first-principles calculations. In contrast to previous theoretical studies on Si(001) Phys. Rev. Lett. 97 046103 (2006) and in agreement with recent experiments, we reveal a square intermediate anisotropy dissociation pathway across the surface dimer row, where the dissociation energetics and kinetics can be qualitatively altered by the strain and lead to divergent dissociation pathways and patterns with substrate-dimer-bond breaking due to the weak interactions between Ge-Ge and Sb-Ge bonds.

© 2008 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.78.073403
DOI:
10.1103/PhysRevB.78.073403
PACS:
68.65.−k

*wjt@aphy.iphy.ac.cn