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Phys. Rev. B 78, 045405 (2008) [34 pages]

Electronic properties of bilayer and multilayer graphene

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Johan Nilsson1,2, A. H. Castro Neto1, F. Guinea3, and N. M. R. Peres4
1Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA
2Instituut-Lorentz, Universiteit Leiden, P.O. Box 9506, 2300 RA Leiden, The Netherlands
3Instituto de Ciencia de Materiales de Madrid CSIC, Cantoblanco, E28049 Madrid, Spain
4Center of Physics and Departamento de Física, Universidade do Minho, P-4710-057 Braga, Portugal

Received 18 January 2008; published 2 July 2008

We study the effects of site dilution disorder on the electronic properties in graphene multilayers, in particular the bilayer and the infinite stack. The simplicity of the model allows for an easy implementation of the coherent-potential approximation and some analytical results. Within the model we compute the self-energies, the density of states, and the spectral functions. Moreover, we obtain the frequency and temperature dependence of the conductivity as well as the dc conductivity. The c-axis response is unconventional in the sense that impurities increase the response for low enough doping. We also study the problem of impurities in the biased graphene bilayer.

© 2008 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.78.045405
DOI:
10.1103/PhysRevB.78.045405
PACS:
73.21.Ac, 81.05.Uw, 71.23.−k