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Phys. Rev. B 78, 233308 (2008) [4 pages]

Spin susceptibility and effective mass of two-dimensional electrons in MgxZn1−xO/ZnO heterostructures

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A. Tsukazaki1, A. Ohtomo1, M. Kawasaki1,2,3, S. Akasaka4, H. Yuji4, K. Tamura4, K. Nakahara4, T. Tanabe4, A. Kamisawa4, T. Gokmen5, J. Shabani5, and M. Shayegan5
1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
2WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
3CREST, Japan Science and Technology Agency, Tokyo 102-0075, Japan
4Advanced Compound Semiconductors R&D Center, ROHM Co., Ltd., Kyoto 615-8585, Japan
5Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

Received 9 September 2008; revised 28 October 2008; published 10 December 2008

We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1−xO/ZnO single heterostructures (x=0.05, 0.08, and 0.11), grown by molecular-beam epitaxy on (0001) ZnO substrates. By tuning the built-in polarization through control of the barrier composition, the electron density was systematically varied in the range of 5.6×1011–1.6×1012 cm−2, corresponding to a range of 3.1≤rs≤5.2, where rs is the average electron spacing measured in units of the effective Bohr radius. We used the coincidence technique, where crossings of the spin-split Landau levels occur at critical tilt angles of magnetic field, to evaluate the spin susceptibility. In addition, we determined the effective mass from the temperature dependence of the Shubnikov–de Haas oscillations measured at the coincidence conditions. The susceptibility and the effective mass both gradually increase with decreasing electron density, reflecting the role of electron-electron interaction.

© 2008 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.78.233308
DOI:
10.1103/PhysRevB.78.233308
PACS:
73.43.Qt, 71.70.Ej, 72.80.Ey