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Phys. Rev. B 78, 134104 (2008) [7 pages]

Ab initio study of bilateral doping within the MoS2-NbS2 system

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Viktoria V. Ivanovskaya1,2,*, Alberto Zobelli1,3, Alexandre Gloter1, Nathalie Brun1, Virginie Serin4, and Christian Colliex1
1Laboratoire de Physique des Solides, Université Paris-Sud, CNRS-UMR 8502, 91405 Orsay, France
2Institute of Solid State Chemistry, Ural Division of Russian Academy of Science, 620041 Ekaterinburg, Russia
3Laboratoire des Solides Irradiés UMR 7642, CNRS-CEA/DSM, École Polytechnique, F-91128 Palaiseau, France
4CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4, France

Received 7 June 2008; revised 2 September 2008; published 8 October 2008

We present a systematic study on the stability and the structural and electronic properties of mixed molybdenum-niobium disulphides. Using density-functional theory we investigate bilateral doping with up to 25% of MoS2 (NbS2) by Nb (Mo) atoms focusing on the precise arrangement of dopants within the host lattices. We find that over the whole range of considered concentrations, Nb doping of MoS2 occurs through a substitutional mechanism. For Mo in NbS2 both interstitial and substitutional dopings can coexist depending upon the particular synthesis conditions. The analysis of the structural and electronic modifications of the perfect bulk systems due to the doping is presented. We show that substitutional Nb atoms introduce electron holes to the MoS2 leading to a semiconductor-metal transition. On the other hand, the Mo doping of NbS2 does not alter the metallic behavior of the initial system. The results of the present study are compared with available experimental data on mixed MoS2-NbS2 (bulk and nanoparticles).

© 2008 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.78.134104
DOI:
10.1103/PhysRevB.78.134104
PACS:
61.72.sh, 61.66.Fn, 74.62.Dh, 71.15.Mb

*ivanovskaya@lps.u-psud.fr