Phys. Rev. B 77, 085319 (2008) [6 pages]Monolayer oxidation on Si(001)-(2×1) studied by means of reflectance difference spectroscopyReceived 5 March 2007; revised 12 December 2007; published 26 February 2008 Thermal growth of the first oxide layer on a single-domain Si(001)-(2×1) surface has been investigated by means of reflectance difference spectroscopy. The transition temperature between two different growth modes, namely, Langmuir-type adsorption and two-dimensional island growth, was identified from Arrhenius plots of the oxidation periods for the growth of an oxide monolayer. The activation energy for the growth of an oxide monolayer was estimated to be ϵ1=0.16±0.03 eV. The activation energy at low coverage was estimated to be ϵ1*=0.26±0.03 eV from analysis of the initial slope of the uptake curves. Our results demonstrate that a finite activation energy exists for monolayer oxide formation on Si(001)-(2×1) at high temperatures. © 2008 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.77.085319
DOI:
10.1103/PhysRevB.77.085319
PACS:
78.66.Jg, 68.43.−h, 68.47.Fg, 78.40.−q
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