Semianalytical model for simulation of electronic properties of narrow-gap strained semiconductor quantum nanostructures

A complete semianalytical model is proposed for the simulation of the electronic, mechanical, and piezoelectric properties of narrow-gap strained semiconductor quantum nanostructures. A transverse isotropic approximation for the strain and an axial approximation for the strained 8×8 Hamiltonian are proposed. It is applied extensively to the case of InAs∕InP quantum dots (QDs). Symmetry analysis shows that there does exist a nonvanishing splitting on the electron P states due to the coupling with valence band. This splitting, which was not considered before, is found to be smaller in InAs∕GaAs QD than in InAs∕InP QD. Analytic expressions for the first and second order piezoelectric polarizations are used to evaluate the perturbation of electronic states.