Phys. Rev. B 77, 085212 (2008) [5 pages]Colossal positive magnetoresistance in a doped nearly magnetic semiconductorReceived 15 October 2007; revised 6 December 2007; published 27 February 2008 We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb2, a nearly magnetic or “Kondo” semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity. © 2008 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.77.085212
DOI:
10.1103/PhysRevB.77.085212
PACS:
75.47.Gk, 71.30.+h, 72.15.Rn, 75.50.Pp
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