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Phys. Rev. B 77, 085212 (2008) [5 pages]

Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

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Rongwei Hu1,2, K. J. Thomas1,*, Y. Lee3, T. Vogt1,†, E. S. Choi4, V. F. Mitrović2, R. P. Hermann5,‡, F. Grandjean5, P. C. Canfield6, J. W. Kim6, A. I. Goldman6, and C. Petrovic1
1Condensed Matter Physics, Brookhaven National Laboratory, Upton, New York 11973, USA
2Physics Department, Brown University, Providence, Rhode Island 02912, USA
3Department of Earth System Sciences, Yonsei University, Seoul 120749, Korea
4NHMFL/Physics, Florida State University, Tallahassee, Florida 32310, USA
5Department of Physics, Université de Liège, B-4000 Liège, Belgium
6Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, USA

Received 15 October 2007; revised 6 December 2007; published 27 February 2008

We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb2, a nearly magnetic or “Kondo” semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.

© 2008 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.77.085212
DOI:
10.1103/PhysRevB.77.085212
PACS:
75.47.Gk, 71.30.+h, 72.15.Rn, 75.50.Pp

*Present address: Nature Publishing Group, London, UK.

Present address: Department of Chemistry and Biochemistry, University of South Carolina, Columbia, SC 29208, USA.

Present address: Institut für Festkörperforschung, Forschungzentrum Jülich GmbH, D-52425 Jülich, Germany.