corner
corner

Phys. Rev. B 77, 205107 (2008) [7 pages]

Atomic and electronic structures of thallium-based III-V-VI2 ternary chalcogenides: Ab initio calculations

Download: PDF (769 kB) Buy this article Export: BibTeX or EndNote (RIS)

Khang Hoang and S. D. Mahanti*
Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824, USA

Received 12 February 2008; revised 13 April 2008; published 13 May 2008

The atomic and electronic structures of III-V-VI2 ternary chalcogenides (III=Tl, V=Sb and Bi, and VI=Te, Se, and S) have been studied using ab initio electronic structure calculations. Most of these compounds are found to take rhombohedral structures as their lowest energy structures (except for TlSbS2, which takes a triclinic structure), in agreement with experiments. There is a disagreement between theory and experiment in the case of TlSbSe2, wherein our calculations identify a rhombohedral structure (as yet hypothetical), which has lower energy than a monoclinic one (given by experiment). Band-gap formation in these ternaries are controlled by a highly directional hybridization between the cation (Sb, Bi), anion (S, Se, Te), and Tl p states, and the electronic structure near the Fermi level is sensitive to the ordering on the cation sublattice.

© 2008 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.77.205107
DOI:
10.1103/PhysRevB.77.205107
PACS:
71.20.Nr, 71.15.Nc, 71.28.+d

*Corresponding author; mahanti@pa.msu.edu