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Phys. Rev. B 77, 125320 (2008) [5 pages]

High-field magnetocrystalline anisotropic resistance effect in (Ga,Mn)As

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D. Wu1,2, Peng Wei1, E. Johnston-Halperin3, D. D. Awschalom4, and Jing Shi1
1Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
2National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 22 Hankou Road, Nanjing 210093, China
3Department of Physics, Ohio State University, Columbus, Ohio 43210, USA
4Department of Physics, University of California, Santa Barbara, California 93106, USA

Received 25 October 2007; revised 19 December 2007; published 17 March 2008

As the magnetization rotates in the (001) plane of epitaxial (Ga,Mn)As films, we observe both two- and fourfold oscillations of comparable magnitude in the longitudinal resistivity. This behavior is different from the usual anisotropic magnetoresistance effect in polycrystalline films. The fourfold or cubic symmetry vanishes at the Curie temperature TC, indicating that it originates from the long-range ferromagnetic phase in single crystal films. In contrast, the twofold symmetry persists above TC, suggesting its origin to be from the alignment of spins with random orientations. However, the transverse, or planar Hall, resistivity only contains a twofold oscillation. The temperature dependence of the magnetocrystalline anisotropic resistance effect is explained by a two-component model.

© 2008 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.77.125320
DOI:
10.1103/PhysRevB.77.125320
PACS:
73.50.−h, 75.47.−m, 75.50.Pp