Phys. Rev. B 76, 085304 (2007) [6 pages]Micropatterned electrostatic traps for indirect excitons in coupled GaAs quantum wellsReceived 27 March 2007; revised 9 May 2007; published 6 August 2007 We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well, indirect excitons are trapped at the perimeter of a SiO2 area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find the one-dimensional trapping potentials in the quantum well plane to be nearly harmonic with high spring constants exceeding 10 keV∕cm2. © 2007 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.76.085304
DOI:
10.1103/PhysRevB.76.085304
PACS:
71.35.Lk, 78.55.Cr
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