Phys. Rev. B 76, 245305 (2007) [4 pages]Spin current and electrical polarization in GaN double-barrier structuresReceived 20 June 2007; published 5 December 2007 Tunnel current and spin polarization in a piezoelectric AlGaN∕GaN double-barrier structure are calculated. The results are compared with those obtained in the flatband approximation where internal electric fields are neglected. It is shown that the piezoelectric field and the spontaneous electrical polarization considerably increase the efficiency of the tunnel spin injection. The relation between the electrical polarization and the spin orientation allows adjustment of the zero magnetic field spin injection by manipulating the lattice-mismatch strain with the Al content in the barriers. © 2007 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.76.245305
DOI:
10.1103/PhysRevB.76.245305
PACS:
72.25.Dc, 72.25.Hg, 73.21.Fg
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