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Phys. Rev. B 76, 245120 (2007) [5 pages]

Comparison between experiment and calculated band structures for DyN and SmN

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A. R. H. Preston1, S. Granville1, D. H. Housden1, B. Ludbrook1, B. J. Ruck1, H. J. Trodahl1, A. Bittar2, G. V. M. Williams2, J. E. Downes3, A. DeMasi4, Y. Zhang4, K. E. Smith4, and W. R. L. Lambrecht5
1MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, Box 600, Wellington, New Zealand
2Industrial Research Ltd., Box 31-310, Lower Hutt, New Zealand
3Department of Physics, Macquarie University, New South Wales 2109, Australia
4Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA
5Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106-7079, USA

Received 15 June 2007; revised 24 September 2007; published 20 December 2007

We investigate the electronic band structure of two of the rare-earth nitrides, DyN and SmN. Resistivity measurements imply that both materials have a semiconducting ground state, and both show resistivity anomalies coinciding with the magnetic transition, despite the different magnetic states in DyN and SmN. X-ray absorption and emission measurements are in excellent agreement with densities of states obtained from LSDA+U calculations, although for SmN the calculations predict a zero band gap.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.76.245120
DOI:
10.1103/PhysRevB.76.245120
PACS:
71.20.Eh, 71.15.−m, 75.50.Pp, 78.70.Dm
 
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