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Phys. Rev. B 76, 205105 (2007) [6 pages]

Importance of thermal disorder and electronic occupation for temperature dependence of optical conductivity in FeSi and MnSi

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T. Jarlborg
DPMC, University of Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland

Received 19 September 2007; published 13 November 2007

The spectral weight (SW) for optical transitions in FeSi and MnSi are calculated as a function of temperature by means of linear muffin-tin orbital–local density approximation band calculations. The main effects, caused by structural disorder and electronic Fermi-Dirac distribution, act oppositely on the T dependence of the SW, while the variation of the magnetic moment in MnSi has only a minor effect. The calculations agree with the experimental findings of an increasing SW in FeSi and a decreasing SW in MnSi as function of T. The results can be understood from the change of the band structure with disorder.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.76.205105
DOI:
10.1103/PhysRevB.76.205105
PACS:
71.23.−k, 78.20.−e, 72.15.Cz, 71.15.Mb