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APS » Journals » Phys. Rev. B » Volume 76 » Issue 16
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Phys. Rev. B 76, 161201(R) (2007) [4 pages]

Weak localization in Ga1−xMnxAs: Evidence of impurity band transport

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L. P. Rokhinson and Y. Lyanda-Geller
Department of Physics and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA

Z. Ge, S. Shen, X. Liu, M. Dobrowolska, and J. K. Furdyna
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA

Received 28 February 2007; revised 12 July 2007; published 12 October 2007

We report the observation of negative magnetoresistance in the ferromagnetic semiconductor Ga1−xMnxAs, x=0.05–0.08, at low temperatures (T<3 K) and low magnetic fields (0<B<20 mT). We attribute this effect to weak localization. Observation of weak localization strongly suggests impurity band transport in these materials, since for valence band transport one expects either weak antilocalization due to strong spin-orbit interactions or total suppression of interference by intrinsic magnetization. In addition to the weak localization, we observe Altshuler-Aronov electron-electron interaction effects in this material.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.76.161201
DOI:
10.1103/PhysRevB.76.161201
PACS:
75.50.Pp, 71.23.−k, 73.20.Fz
 
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