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Phys. Rev. B 76, 155406 (2007) [8 pages]

Photoemission and optical studies of ZrSe3, HfSe3, and ZrS3

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D. Pacilé1,2, M. Papagno1,2, M. Lavagnini3, H. Berger4, L. Degiorgi3, and M. Grioni1
1Ecole Polytechnique Fédéderale de Lausanne, Institut de Physique des Nanostructures, CH-1015 Lausanne, Switzerland
2Istituto Nazionale di Fisica Nucleare (INFN), Dipartimento di Fisica, Università della Calabria, 87036 Rende, Cosenza, Italy
3Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland
4Ecole Polytechnique Fédéderale de Lausanne, Institut de Physique de la Matière Complexe, CH-1015 Lausanne, Switzerland

Received 12 February 2007; revised 16 May 2007; published 4 October 2007

Angle-resolved photoemission spectroscopy (ARPES) and optical measurements were performed on single crystal samples of ZrSe3, HfSe3, and ZrS3, which belong to the class of low-dimensional band insulators. By ARPES, we traced the dispersion of the (S 3p, Se 4p) p-derived valence states. In all cases, the topmost band exhibits energy splitting increasing from S to Se, which we attribute to the spin-orbit interaction, similar to recent observations in the related layered dichalcogenides. The combination of optical and photoemission results allows us to address the issue of the gap feature in the absorption spectra and to characterize the electronic and vibrational properties of ZrSe3, HfSe3, and ZrS3.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.76.155406
DOI:
10.1103/PhysRevB.76.155406
PACS:
71.45.Lr, 78.20.−e, 79.60.−i