Phys. Rev. B 76, 144415 (2007) [6 pages]Spin-polarized tunneling as a probe of the electronic properties of Ga1−xMnxAs heterostructuresSee Also: Publisher's Note Received 27 April 2007; revised 17 July 2007; published 11 October 2007; corrected 23 October 2007 We present magnetic and tunnel transport properties of (Ga,Mn)As∕(In,Ga)As∕(Ga,Mn)As structure before and after adequate annealing procedure. The conjugate increase of magnetization and tunnel magnetoresistance obtained after annealing is shown to be associated with the increase of both exchange energy Δexch and hole concentration by reduction of the Mn interstitial atom in the top magnetic electrode. Through a 6×6 band k∙p model, we established general phase diagrams of tunneling magnetoresistance (TMR) and tunneling anisotropic magnetoresistance (TAMR) vs (Ga,Mn)As Fermi energy (EF) and spin-splitting parameter (BG). This allows us to give a rough estimation of the exchange energy Δexch=6BG≃−120 meV and hole concentration of the order of p=1×1020 cm−3 for (Ga,Mn)As and beyond gives the general trend of TMR and TAMR vs the selected hole band involved in the tunneling transport. © 2007 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.76.144415
DOI:
10.1103/PhysRevB.76.144415
PACS:
72.25.Dc, 75.47.−m, 75.50.Pp
See AlsoPublisher's Note: M. Elsen, H. Jaffrès, R. Mattana, L. Thevenard, A. Lemaitre, and J.-M. George, Publisher's Note: Spin-polarized tunneling as a probe of the electronic properties of Ga1−xMnxAs heterostructures [Phys. Rev. B 76, 144415 (2007)], Phys. Rev. B 76, 149903 (2007). |
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