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Phys. Rev. B 76, 014112 (2007) [12 pages]

Modeling the dependence of properties of ferroelectric thin film on thickness

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L. Pálová, P. Chandra, and K. M. Rabe
Center for Materials Theory, Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA

Received 3 May 2007; revised 29 June 2007; published 18 July 2007

We present a segregated strain model that can describe the thickness-dependent dielectric properties of epitaxial ferroelectric films. Using a phenomenological Landau approach, we present results for two specific materials, making comparison with experiment and with first-principles calculations whenever possible. We also suggest a “smoking gun” benchtop probe to test our model.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.76.014112
DOI:
10.1103/PhysRevB.76.014112
PACS:
77.22.−d, 77.55.+f, 77.80.Bh