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Phys. Rev. B 75, 045203 (2007) [6 pages]

Valence-band anticrossing in mismatched III-V semiconductor alloys

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K. Alberi1,2, J. Wu1,2, W. Walukiewicz1, K. M. Yu1, O. D. Dubon1,2, S. P. Watkins3, C. X. Wang3, X. Liu4, Y.-J. Cho4, and J. Furdyna4
1Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
2Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
3Department of Physics, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6
4Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA

Received 26 May 2006; revised 15 November 2006; published 16 January 2007

We show that the band gap bowing trends observed in III-V alloys containing dilute concentrations of Sb or Bi can be explained within the framework of the valence-band anticrossing model. Hybridization of the extended p-like states comprising the valence band of the host semiconductor with the close-lying localized p-like states of Sb or Bi leads to a nonlinear shift of the valence-band edge and a reduction of the band gap. The two alloys GaSbxAs1−x and GaBixAs1−x are explored in detail, and the results are extrapolated to additional systems.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.75.045203
DOI:
10.1103/PhysRevB.75.045203
PACS:
71.20.Nr, 71.55.Eq, 78.30.Fs
 
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