Phys. Rev. B 75, 233202 (2007) [4 pages]Reduction of carrier mobility in semiconductors caused by charge-charge interactionsReceived 8 April 2007; revised 14 May 2007; published 13 June 2007 We investigate the effect of charge-charge interactions on carrier mobility in titanium dioxide (TiO2) and silicon (Si) using terahertz spectroscopy. Charge scattering times and plasma frequencies are directly determined as a function of charge density. In Si, a linear increase in scattering rate for densities exceeding 1021 m−3 is attributed to electron-hole scattering. In contrast, in TiO2, charge-charge interactions are suppressed due to dielectric screening, highlighting the vastly different dielectric properties for these two materials. © 2007 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.75.233202
DOI:
10.1103/PhysRevB.75.233202
PACS:
72.40.+w, 72.10.Di, 72.20.Dp
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