Phys. Rev. B 75, 205206 (2007) [8 pages]Magnetism of Co-doped ZnO thin filmsReceived 27 November 2006; revised 1 March 2007; published 22 May 2007 We have investigated magnetic and transport properties of 5% Co-doped and undoped ZnO thin films deposited on r plane Al2O3 substrates by pulsed laser deposition. The Co doped films showed paramagnetic and ferromagnetic behavior as well as a high magnetoresistance and a small anomalous Hall effect. In a range of 0 to 5 T at low temperatures we observed a double sign change of the magnetoresistance. For undoped ZnO films, prepared by the same conditions, only a negative MR was observed, but surprisingly also a very small anomalous Hall effect. We explain our results by applying a semiempirical fit consisting of a positive and a negative contribution to the magnetoresistance. Using x-ray magnetic circular dichroism we investigated element specific magnetic moments in Co-doped laser ablated ZnO films. As the Co atoms show a paramagnetic behavior, we attribute the ferromagnetism to a spontaneously spin impurity band induced by oxygen vacancies and defects due to the transition metal doping and/or interface stress to the substrate. © 2007 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.75.205206
DOI:
10.1103/PhysRevB.75.205206
PACS:
75.50.Pp, 75.47.−m, 87.64.Gb, 85.75.−d
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