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Phys. Rev. B 75, 195335 (2007) [6 pages]

Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surfaces

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A. Stroppa1,2,*, X. Duan1,2,†, M. Peressi1,2,‡, D. Furlanetto3,4, and S. Modesti3,4
1Dipartimento di Fisica Teorica, Università di Trieste, Strada Costiera 11, 34014 Trieste, Italy
2CNR-INFM DEMOCRITOS National Simulation Center, via Beirut 2-4, 34014 Trieste, Italy
3CNR-INFM TASC National Laboratory, Area Science Park, 34012 Trieste, Italy
4Dipartimento di Fisica and Center of Excellence for Nanostructured Materials, CENMAT, Università di Trieste, via A. Valerio 2, 34127 Trieste, Italy

Received 27 October 2006; revised 9 February 2007; published 24 May 2007

We present a combined experimental and computational study of the (110) cross-sectional surface of Mn δ-doped GaAs samples. We focus our study on three different selected Mn defect configurations not previously studied in detail, namely surface interstitial Mn, isolated and in pairs, and substitutional Mn atoms on cationic sites (MnGa) in the first subsurface layer. The sensitivity of the scanning tunneling microscopy (STM) images to the specific local environment allows us to distinguish between Mn interstitials with nearest-neighbor As atoms (IntAs) rather than Ga atoms (IntGa), and to identify the fingerprint of peculiar satellite features around subsurface substitutional Mn. The simulated STM maps for IntAs, both isolated and in pairs, and MnGa in the first subsurface layer are consistent with some experimental images hitherto not fully characterized.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.75.195335
DOI:
10.1103/PhysRevB.75.195335
PACS:
73.20.−r, 73.43.Cd, 68.37.Ef

*Present address: Institute of Material Physics, University of Vienna, Sensengasse 8/12, A-1090 Wien, Austria and Center for Computational Materials Science (CMS), Wien, Austria. Electronic address: astroppa@ts.infn.it

Present address: School of Physics, The University of Sydney, NSW 2006 Australia.

Electronic address: peressi@ts.infn.it