corner
corner

Phys. Rev. B 75, 195131 (2007) [7 pages]

First-principles calculations of the elastic, electronic, and optical properties of the filled skutterudites CeFe4P12 and ThFe4P12

Download: PDF (473 kB) Buy this article Export: BibTeX or EndNote (RIS)

R. Khenata1,*, A. Bouhemadou2, Ali. H. Reshak3, R. Ahmed4, B. Bouhafs5, D. Rached1, Y. Al-Douri6, and M. Rérat7
1Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, 29000 Mascara, Algeria
2Department of Physics, Faculty of Sciences, University of Setif, 19000 Setif, Algeria
3Institute of Physical Biology, University of S. Bohemia, Institute of System Biology and Ecology, Academy of Sciences, Nove Hrady 373 33, Czech Republic
4Centre for High Energy Physics, University of the Punjab, Lahore 54590, Pakistan
5Modelling and Simulation in Materials Science Laboratory, Physics Department, Faculty of Sciences, University of Sidi Bel-Abbès, 22000 Sidi Bel-Abbès, Algeria
6Laboratoire CRISMAT, ENSICAEN/CNRS-UMR 6508, 6 Boulevard de Maréchal Juin, F-14050 Cean, Cedex, France
7Equipe de Chimie-Physique, IPREM UMR5254, Université de Pau, F-64000 Pau, France

Received 22 June 2006; revised 25 September 2006; published 30 May 2007

The complex density-functional theory calculations of structural, electronic, and optical properties for two principal representatives of the filled skutterudites CeFe4P12 and ThFe4P12 have been reported using the full-potential linearized augmented plane-wave method plus local orbitals, as implemented in the WIEN2K code. In this approach, the local-density approximation is used for the exchange-correlation potential. We performed these calculations with and without spin-orbit interactions. Results are given for lattice constant, bulk modulus, and its pressure derivative. Band structure, density of states, pressure coefficients of energy gaps, and refractive indices are also given. We note that both CeFe4P12 and ThFe4P12 are semiconductors with indirect and direct energy gaps, respectively. The valence-band maximum is located at Γ for both compounds, whereas the conduction-band minimum is located at Γ for ThFe4P12 and at N for CeFe4P12. Our results are compared with previous theoretical calculations and experimental data.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.75.195131
DOI:
10.1103/PhysRevB.75.195131
PACS:
71.20.−b, 74.25.Gz, 74.62.Fj

*Corresponding author. Electronic address: khenata̱rabah@yahoo.fr