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Phys. Rev. B 75, 155104 (2007) [14 pages]

Electronic structure and optical properties of ZnX (X=O, S, Se, Te): A density functional study

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S. Zh. Karazhanov1,2, P. Ravindran1, A. Kjekshus1, H. Fjellvåg1, and B. G. Svensson3
1Centre for Material Science and Nanotechnology, Department of Chemistry, University of Oslo, P.O. Box 1033 Blindern, N-0315 Oslo, Norway
2Physical-Technical Institute, 2B Mavlyanov Street, Tashkent 700084, Uzbekistan
3Department of Physics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway

Received 5 July 2006; revised 15 November 2006; published 6 April 2007

Electronic band structure and optical properties of zinc monochalcogenides with zinc-blende- and wurtzite-type structures were studied using the ab initio density functional method within the local-density approximation (LDA), generalized-gradient approximation, and LDA+U approaches. Calculations of the optical spectra have been performed for the energy range 0–20 eV, with and without including spin-orbit coupling. Reflectivity, absorption and extinction coefficients, and refractive index have been computed from the imaginary part of the dielectric function using the Kramers-Kronig transformations. A rigid shift of the calculated optical spectra is found to provide a good first approximation to reproduce experimental observations for almost all the zinc monochalcogenide phases considered. By inspection of the calculated and experimentally determined band-gap values for the zinc monochalcogenide series, the band gap of ZnO with zinc-blende structure has been estimated.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.75.155104
DOI:
10.1103/PhysRevB.75.155104
PACS:
71.15.−m, 71.22.+i