Phys. Rev. B 75, 155103 (2007) [5 pages]Optical probe of electrostatic-doping in an n-type Mott insulatorReceived 7 February 2007; published 6 April 2007 Electrostatic-doping into an n-type Mott insulator Sm2CuO4 has been successfully achieved with use of the heterojunction with an n-type band semiconductor Nb-doped SrTiO3. The junction exhibits rectifying current-voltage characteristics due to the interface band discontinuity and the formation of depleted region. The application of reverse bias electric field on this junction enables the field-effect electron doping (presumably up to 6% per Cu atom) to the Mott insulator. The electromodulation absorption spectroscopy could clearly show a large modification of the Mott-gap state accompanying the spectral weight transfer to the lower-energy region, reminiscent of formation of a metallic state. © 2007 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.75.155103
DOI:
10.1103/PhysRevB.75.155103
PACS:
78.20.Jq, 73.20.−r, 74.72.Jt
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