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Phys. Rev. B 75, 153304 (2007) [4 pages]

Tuning of the spin-orbit interaction in two-dimensional GaAs holes via strain

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B. Habib, J. Shabani, E. P. De Poortere, and M. Shayegan
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

R. Winkler
Department of Physics, Northern Illinois University, De Kalb, Illinois 60115, USA

Received 12 February 2007; published 17 April 2007

We report direct measurements of the spin-orbit interaction-induced spin splitting in a modulation-doped GaAs two-dimensional hole system as a function of anisotropic, in-plane strain. The change in spin-subband densities reveals a remarkably strong dependence of the spin splitting on strain, with up to about 20% enhancement of the splitting upon the application of only about 2×10−4 strain. The results are in very good agreement with our numerical calculations of the strain-induced spin splitting.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.75.153304
DOI:
10.1103/PhysRevB.75.153304
PACS:
73.61.Ey, 72.20.Fr, 72.25.Dc