Phys. Rev. B 75, 125114 (2007) [8 pages]Electronic charge reconstruction of doped Mott insulators in multilayered nanostructuresReceived 13 December 2006; published 22 March 2007 Dynamical mean-field theory is employed to calculate the electronic charge reconstruction of multilayered inhomogeneous devices composed of semi-infinite metallic lead layers sandwiching barrier planes of a strongly correlated material (that can be tuned through the metal-insulator Mott transition). The main focus is on barriers that are doped Mott-insulators, and how the electronic charge reconstruction can create well-defined Mott insulating regions in a device whose thickness is governed by intrinsic materials properties, and hence may be able to be reproducibly made. © 2007 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.75.125114
DOI:
10.1103/PhysRevB.75.125114
PACS:
71.27.+a, 72.80.Ga, 73.20.−r, 71.10.Fd
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