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APS » Journals » Phys. Rev. B » Volume 75 » Issue 10
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Phys. Rev. B 75, 100402(R) (2007) [4 pages]

Oscillatory tunneling magnetoresistance caused by antiferromagnetic Mn layers

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P. Bose1, I. Mertig1, and J. Henk2
1Martin-Luther-Universität Halle-Wittenberg, FB Physik, FG Theoretische Physik, D-06099 Halle (Saale), Germany
2Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle (Saale), Germany

Received 23 November 2006; revised 23 January 2007; published 22 March 2007

The ballistic magnetoresistance of tunnel junctions that comprise Mn films is found to exhibit oscillations with increasing Mn-film thickness, as is investigated by means of first-principles electronic-structure and transport calculations. The period of two monolayers is directly related to the layer-wise antiferromagnetic structure of the Mn films, in particular to the alternating magnetization at the interfaces. These findings substantiate unequivocally the effect of the electronic and magnetic structure of interfaces on the conductance of tunnel junctions.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.75.100402
DOI:
10.1103/PhysRevB.75.100402
PACS:
75.47.Jn, 75.70.Ak, 85.75.−d

*Electronic address: peter.bose@physik.uni-halle.de

 
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