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Phys. Rev. B 74, 085319 (2006) [7 pages]

Excitation mechanisms of individual CdTe∕ZnTe quantum dots studied by photon correlation spectroscopy

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J. Suffczyński*, T. Kazimierczuk, M. Goryca, B. Piechal, A. Trajnerowicz, K. Kowalik, P. Kossacki, A. Golnik, K. P. Korona, M. Nawrocki, and J. A. Gaj
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

G. Karczewski
Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/64, 02-668 Warsaw, Poland

Received 22 March 2006; revised 14 June 2006; published 25 August 2006

Systematic measurements of auto- and cross-correlations of photons emitted from individual CdTe∕ZnTe quantum dots under pulsed excitation were used to elucidate nonresonant excitation mechanisms in this self-assembled system. Memory effects extending over a few excitation pulses have been detected in agreement with previous reports and quantitatively described by a rate equation model, fitting a complete set of correlation and PL intensity results. The important role of single carrier trapping in the quantum dot was established. An explanation was suggested for the unusually wide antibunching dip observed previously in X-X autocorrelation experiments on quantum dots under cw excitation.

© 2006 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.74.085319
DOI:
10.1103/PhysRevB.74.085319
PACS:
73.21.La, 78.55.Et, 78.67.−n, 78.47.+p

*Electronic address: Jan.Suffczynski@fuw.edu.pl