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Phys. Rev. B 74, 075410 (2006) [5 pages]

Influence of quantum size effects on Pb island growth and diffusion barrier oscillations

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Shao-Chun Li1,2, Xucun Ma1, Jin-Feng Jia1,*, Yan-Feng Zhang1, Dongmin Chen1, Qian Niu3, Feng Liu4, Paul S. Weiss2, and Qi-Kun Xue1
1Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
2Department of Chemistry and Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
3Department of Physics, University of Texas at Austin, Texas 78712, USA
4Department of Material Science and Engineering, University of Utah, Salt Lake City, Utah 84112, USA

Received 5 March 2006; revised 27 June 2006; published 9 August 2006

Quantum size effects are successfully exploited in manipulating the growth of (111) oriented Pb islands on Si(111) substrate with a scanning tunneling microscope. The growth dynamics and morphology displayed can be well controlled through the quantum size effects defined by the island thicknesses and the interplay with the classical forces. The transition of growth modes from quantum to classical regime and the quantum beating in morphological dynamics are directly identified in real space and quantitatively analyzed. Atomic diffusion barriers, an important parameter in the thin film growth process, are also demonstrated to be modified by quantum size effects, and oscillate with a two-monolayer periodicity.

© 2006 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.74.075410
DOI:
10.1103/PhysRevB.74.075410
PACS:
68.55.Jk, 68.37.Ef, 73.21.−b, 81.16.−c

*Corresponding author. Email address: jfjia@aphy.iphy.ac.cn